Impact of Tellurium Precipitates in CdZnTe Substrates on MBE HgCdTe DepositionBENSON, J. D; BUBULAC, L. O; CHEN, Y et al.Journal of electronic materials. 2014, Vol 43, Num 11, pp 3993-3998, issn 0361-5235, 6 p.Article

Evaluation of Surface Cleaning of Si(211) for Molecular-Beam Epitaxy Deposition of Infrared DetectorsJAIME-VASQUEZ, M; JACOBS, R. N; BENSON, J. D et al.Journal of electronic materials. 2010, Vol 39, Num 7, pp 951-957, issn 0361-5235, 7 p.Conference Paper

Development and fabrication of two-color mid- and short-wavelength infrared simultaneous unipolar multispectral integrated technology focal-plane arraysALMEIDA, L. A; THOMAS, M; LARSEN, W et al.Journal of electronic materials. 2002, Vol 31, Num 7, pp 669-676, issn 0361-5235Conference Paper

Suppression of strain-induced cross-hatch on molecular beam epitaxy (211)B HgCdTeMARTINKA, M; ALMEIDA, L. A; BENSON, J. D et al.Journal of electronic materials. 2002, Vol 31, Num 7, pp 732-737, issn 0361-5235Conference Paper

Identification of strong photometric activity in the components of LHS 1070ALMEIDA, L. A; JABLONSKI, F; MARTIOLI, E et al.Astronomy and astrophysics (Berlin. Print). 2011, Vol 525, issn 0004-6361, A84.1-A84.5, 1Article

LWIR HgCdTe on Si detector performance and analysisCARMODY, M; PASKO, J. G; DHAR, N. K et al.Journal of electronic materials. 2006, Vol 35, Num 6, pp 1417-1422, issn 0361-5235, 6 p.Conference Paper

Molecular beam epitaxy growth of high-quality hgcdte LWIR layers on polished and repolished CdZnTe substratesSINGH, R; VELICU, S; CROCCO, J et al.Journal of electronic materials. 2005, Vol 34, Num 6, pp 885-890, issn 0361-5235, 6 p.Conference Paper

Macro-loading effects of electron-cyclotron resonance etched II-VI materialsSTOLTZ, A. J; BENSON, J. D; VARESI, J. B et al.Journal of electronic materials. 2004, Vol 33, Num 6, pp 684-689, issn 0361-5235, 6 p.Conference Paper

HgCdTe on Si: Present status and novel buffer layer conceptsGOLDING, T. D; HOLLAND, O. W; KIM, M. J et al.Journal of electronic materials. 2003, Vol 32, Num 8, pp 882-889, issn 0361-5235, 8 p.Conference Paper

Characterization of cross-hatch morphology of MBE (211) HgCdTeMARTINKA, M; ALMEIDA, L. A; BENSON, J. D et al.Journal of electronic materials. 2001, Vol 30, Num 6, pp 632-636, issn 0361-5235Conference Paper

TEM Characterization of HgCdTe/CdTe Grown on GaAs(211)B SubstratesJAE JIN KIM; JACOBS, R. N; ALMEIDA, L. A et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3142-3147, issn 0361-5235, 6 p.Conference Paper

The Surface Kinetics of MBE-Grown CdTe (211)B During In Situ Cyclic AnnealingLENNON, C. M; ALMEIDA, L. A; JACOBS, R. N et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3344-3348, issn 0361-5235, 5 p.Conference Paper

Development of MBE II―VI Epilayers on GaAs(211)BJACOBS, R. N; NOZAKI, C; BILLMAN, C et al.Journal of electronic materials. 2012, Vol 41, Num 10, pp 2707-2713, issn 0361-5235, 7 p.Conference Paper

Reduction of Dislocation Density by Producing Novel StructuresSTOLTZ, A. J; BENSON, J. D; JACOBS, R et al.Journal of electronic materials. 2012, Vol 41, Num 10, pp 2949-2956, issn 0361-5235, 8 p.Conference Paper

Influence of substrate orientation on the growth of HgCdTe by molecular beam epitaxyALMEIDA, L. A; GROENERT, M; MARKUNAS, J et al.Journal of electronic materials. 2006, Vol 35, Num 6, pp 1214-1218, issn 0361-5235, 5 p.Conference Paper

Doping of molecular beam epitaxy HgCdTe using an arsenic cracker source (As₂)ALMEIDA, L. A.Journal of electronic materials. 2002, Vol 31, Num 7, pp 660-663, issn 0361-5235Conference Paper

CHARACTERIZING LENSES AND LENSED STARS OF HIGH-MAGNIFICATION SINGLE-LENS GRAVITATIONAL MICROLENSING EVENTS WITH LENSES PASSING OVER SOURCE STARSCHOI, J.-Y; SHIN, I.-G; ALLEN, W et al.The Astrophysical journal. 2012, Vol 751, Num 1, issn 0004-637X, 41.1-41.14, 1Article

Understanding the Evolution of CdTe Buffer Layer Surfaces on ZnTe/Si(211) and GaAs(211)B During Cyclic AnnealingJAIME-VASQUEZ, M; JACOBS, R. N; NOZAKI, C et al.Journal of electronic materials. 2012, Vol 41, Num 10, pp 2975-2980, issn 0361-5235, 6 p.Conference Paper

The Effects of Microvoid Defects on MWIR HgCdTe-Based DiodesBILLMAN, C. A; ALMEIDA, L. A; SMITH, P et al.Journal of electronic materials. 2011, Vol 40, Num 8, pp 1693-1698, issn 0361-5235, 6 p.Conference Paper

Structural Analysis of CdTe Hetero-epitaxy on (211) SiBENSON, J. D; JACOBS, R. N; MARKUNAS, J. K et al.Journal of electronic materials. 2008, Vol 37, Num 9, pp 1231-1236, issn 0361-5235, 6 p.Conference Paper

Effects of a-Si:H resist vacuum-lithography processing on HgCdTeJACOBS, R. N; ROBINSON, E. W; JAIME-VASQUEZ, M et al.Journal of electronic materials. 2006, Vol 35, Num 6, pp 1474-1480, issn 0361-5235, 7 p.Conference Paper

Surface structure of (111)A HgCdTeBENSON, J. D; VARESI, J. B; STOLTZ, A. J et al.Journal of electronic materials. 2006, Vol 35, Num 6, pp 1434-1442, issn 0361-5235, 9 p.Conference Paper

Surface structure of plasma-etched (211)B HgCdTeBENSON, J. D; STOLTZ, A. J; DINAN, J. H et al.Journal of electronic materials. 2005, Vol 34, Num 6, pp 726-732, issn 0361-5235, 7 p.Conference Paper

Determination of the ion angular distribution for electron cyclotron resonance, plasma-etched HgCdTe trenchesBENSON, J. D; STOLTZ, A. J; VARESI, J. B et al.Journal of electronic materials. 2004, Vol 33, Num 6, pp 543-551, issn 0361-5235, 9 p.Conference Paper

Effect of photoresist-feature geometry on electron-cyclotron resonance plasma-etch reticulation of HgCdTe diodesBENSON, J. D; STOLTZ, A. J; KALECZYC, A. W et al.Journal of electronic materials. 2002, Vol 31, Num 7, pp 822-826, issn 0361-5235Conference Paper